Claude reviewed the work he has done with solid state detectors over the last 10 years in the context of ATLAS and Eagle. In collaboration with Francois LeMeilleur of CERN he has been heavily involved in the development of irradiation facilities at CERN. He has worked on the irradiation of various types of silicon sensors with fluences up to several 10^14 protons, neturons and pions per cm^2 typical of the ATLAS inner tracker environment. A PhD student of his (P. Roy) has done charge collection measurements before and after irradiations as well as having developped a charge transport model that describes changes in the effective dopant concentrations, mobilities and charge collection efficiency. Claude had a draft of a document describing the results of these comparisons at the meeting.
Claude has been involved in the study of standard float zone silicon sensors, MESA sensors (silicon, binder, readout sandwiches of silicon), epitaxial silicon, CVD diamond and more recently oxygenated silicon sensors that have been touted by the ROSE collaboration as providing a factor of two increase in the lifetime of silicon at the highest doses.
Montreal has an array of CV, IV and resistivity characterisation equipment available for studying solid state sensors. These could be applied to future studies of pixel sensors.